TPCF8003

2010-01-14

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TPCF8003

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

（

VGS= 4.5V）

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

20

V

Gate-source voltage

±12

V

DC

(Note 1)

7

Drain current

Pulse

(Note 1)

28

A

Drain power dissipation

(t

= 5 s)

(Note 2a)

2.5

W

Drain power dissipation

(t

= 5 s)

(Note 2b)

0.7

W

Single pulse avalanche energy (Note 3)

3.2

mJ

Avalanche current

3.5

A

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to ambient (t

= 5 s)

(Note 2a)

50.0

°C/W

Thermal resistance, channel to ambient (t

= 5 s)

(Note 2b)

178.6

°C/W

Note: For Notes 1 to 3, refer to the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1A

Weight: 0.011 g (typ.)

1. Drain

2. Drain

3. Drain

4. Gate

5.Source

6. Drain

7. Drain

8. Drain