PSMN059-150Y datasheet(2/12 Pages) NXP

2 / 12 page

PSMN059_150Y_1

Product data sheet

Rev. 01 — 5 May 2008

2 of 12

NXP Semiconductors

PSMN059-150Y

N-channel TrenchMOS standard level FET

Ordering information

Limiting values

Table 2.

Ordering information

Type number

Package

Name

Description

Version

PSMN059-150Y

LFPAK

plastic single-ended surface-mounted package; 4 leads

SOT669

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

°C ≤ T

j ≤ 150 °C

150

VDGR

drain-gate voltage

°C ≤ T

j ≤ 150 °C; RGS =20kΩ

150

VGS

gate-source voltage

±20

drain current

Tmb =25 °C; VGS = 10 V; see Figure 2 and 3

-43

Tmb = 100 °C; VGS = 10 V; see Figure 2

27.7

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3

129

Ptot

total power dissipation

Tmb =25 °C; see Figure 1

113

Tstg

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source current

Tmb =25 °C

ISM

peak source current

Tmb =25 °C; pulsed; tp ≤ 10 µs

208

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID = 12.1 A;

tp = 0.21 ms; VDS ≤ 150 V; RGS =50 Ω;

VGS = 10 V; starting at Tj =25 °C

255

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