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PSMN059-150Y Datasheet(PDF) 7 Page - NXP Semiconductors

Part # PSMN059-150Y
Description  N-channel TrenchMOS standard level FET
PDF  12 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PSMN059-150Y Datasheet(HTML) 7 Page - NXP Semiconductors

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PSMN059_150Y_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 5 May 2008
7 of 12
NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS standard level FET
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
ID = 12 A; VDS = 30, 75 and 120 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
Tj (°C)
−60
160
120
060
003aab852
2
3
1
4
5
VGS(th)
(V)
0
max
typ
min
003aab853
VGS (V)
06
4
2
10−4
10−5
10−2
10−3
10−1
ID
(A)
10−6
min
typ
max
QG (nC)
030
22.5
7.5
15
003aab754
4
6
2
8
10
VGS
(V)
0
ID = 12 A
Tj = 25 °C
30
75
VDS = 120 V
003aaa508
VGS
VGS(th)
QGS1
QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)



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