Si5366 datasheet(13/50 Pages) SILABS

13 / 50 page

Si5317

Preliminary Rev. 0.15

Table 6. Thermal Characteristics

(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Thermal Resistance

Junction to Ambient



Still Air

—

ºC/W

Thermal Resistance

Junction to Case



—14

—

ºC/W

Table 7. Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

DC Supply Voltage

VDD

–0.5 to 3.63

LVCMOS Input Voltage

VDIG

–0.3 to (VDD + 0.3)

Operating Junction Temperature

TJCT

–55 to 150

Storage Temperature Range

TSTG

–55 to 150

ESD HBM Tolerance (100 pF, 1.5 k

Ω); All pins except

CKIN+/CKIN–

2kV

ESD MM Tolerance; All pins except CKIN+/CKIN–

200

ESD HBM Tolerance (100 pF, 1.5 k

Ω); CKIN+/CKIN–

700

ESD MM Tolerance; CKIN+/CKIN–

150

Latch-Up Tolerance

JESD78 Compliant

Note: Permanent device damage may occur if the Absolute Maximum Ratings are exceeded. Functional operation should be

restricted to the conditions as specified in the operation sections of this data sheet. Exposure to absolute maximum

rating conditions for extended periods of time may affect device reliability.

Si5366 Datasheet(PDF) 13 Page - Silicon Laboratories

Si5366 Datasheet(HTML) 13 Page - Silicon Laboratories

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

Datasheet Download

Link URL