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TPC8207 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8207 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page ![]() TPC8207 2007-01-16 4 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) VGS = 1.3 V 0 0.2 0.4 0.6 Common source, Ta = 25°C, Pulse test 1.4 0.8 1 0 2 4 6 8 10 1.5 1.55 1.6 1.65 1.7 2 4 6 10 8 0 4 8 12 16 20 01 23 4 5 VGS = 1.3 V 10 6 8 4 Common source Ta = 25°C Pulse test 1.4 1.5 1.55 1.6 1.65 1.7 1.8 1.9 2 0 0 1 2 3 4 5 4 8 12 16 20 Common source VDS = 10 V Pulse test Ta = −55°C 100 25 1 0.1 1 10 100 10 100 1000 2.5 VGS = 2 V 6 4 Common source Ta = 25°C Pulse test 0 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 Common source Ta = 25°C Pulse test ID = 6 A 3 4 1.0 0.1 1.0 10.0 100.0 10.0 100.0 1000.0 Common source VDS = 10 V Pulse test Ta = 100°C −55 25 |
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