K3567 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

2SK3567

2009-09-29

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V

⎯

±10

μA

Gate-source breakdown voltage

V (BR) GSS

IG = ±10 μA, VDS = 0 V

±30

⎯

Drain cut-off current

IDSS

VDS = 600 V, VGS = 0 V

⎯

100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 1.8 A

⎯

1.7

2.2

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, ID = 1.8 A

0.7

2.5

⎯

Input capacitance

Ciss

⎯

550

⎯

Reverse transfer capacitance

Crss

⎯

Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

⎯

Total gate charge

⎯

Gate-source charge

Qgs

⎯

Gate-drain charge

Qgd

VDD ∼− 400 V, VGS = 10 V, ID = 3.5 A

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

⎯

3.5

Pulse drain reverse current

(Note 1)

IDRP

⎯

Forward voltage (diode)

VDSF

IDR = 3.5 A, VGS = 0 V

⎯

−1.7

Reverse recovery time

trr

⎯

1400

⎯

Reverse recovery charge

Qrr

IDR = 3.5 A, VGS = 0 V,

dIDR/dt = 100 A/μs

⎯

9.0

⎯

μC

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

Lot No.

Note 4

K3567

Part No. (or abbreviation code)

RL =

111

0 V

10 V

VGS

VDD ∼− 200 V

ID = 1.8 A VOUT

Duty

≤ 1%, tw = 10 μs

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