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LM3430 Datasheet(PDF) 13 Page - National Semiconductor (TI) |
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LM3430 Datasheet(HTML) 13 Page - National Semiconductor (TI) |
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13 / 16 page ![]() Design Hints The schematic of the demonstration board is shown in page 2. Some hints on selection of the key parameters and com- ponents will be described in below. For full details of the design equations and theories, please refer to the LM3430 and LM3432 datasheets. BOOST CONVERTER DESIGN WITH LM3430 The function of the boost converter is to step up the input voltage to a higher LED rail voltage to drive strings of twelve LEDs connected in series. Determination of the Worst Case LED Rail Voltage, V LED The diode forward voltage, V F of HB-WLED ranges from 3.5V to 4.0V that varies from vendor to vendor. Considering only the worst case situation, i.e. V F = 4.0V, for twelve LEDs con- nected in series, a minimum of 48V is required to put the LED strings in proper operation. On the top of this voltage, addi- tional control headroom for the constant current regulators is needed. The suggested start up LED rail voltage is 50V and this is also the ceiling of the boost converter output voltage, i.e. in case the load is disconnected, the boost converter out- put will stay at this voltage, no risk of over-voltage need to be considered. Once the demonstration board is in operation, the LM3432 will communicate with the LM3430 to lower the LED rail voltage to an appropriate level. This feature makes the LM3430 with LM3432 a robust and efficient LED driver solu- tion. Selecting the Switching Frequency, F SW The selection of switching frequency is a trade off between size, cost and efficiency. In general, a lower switching fre- quency requires larger and more expansive external compo- nents. For some of the applications, space is one of the key considerations. A higher switching frequency can fulfill the space requirement, however the switching losses will go up and the overall system efficiency will be lowered. In this demonstration board, a switching frequency of 1MHz was se- lected. Selection of the Power MOSFET The power MOSFET plays a key role in system efficiency. An ideal power MOSFET should be low gate capacitance, C iss, low gate charge, Q g, low ON resistance, RDS(ON) and sufficient Drain-Source breakdown voltage, V DS(BD). In this application, the required V DS(BD) is 50V plus the Schottky diode voltage drop, typically its about 0.5~0.7V. The average load current with all LED strings fully ON is 120 mA, by quick estimation; the worst case peak switch current is about 0.9A. The tiny MOSFET selected can operate up to 60V and 2A with R DS (ON) = 125 mΩ, Qg = 4.8 nC and Ciss = 240 pF. Selecting the Boost Schottky Diode The boost Schottky diode current equals to the average load current. The forward voltage drop and reverse recovery time determines the power loss with this component. The lower the forward voltage drop and faster reverse recovery time always results in better performance. The Schottky diode must also be rated to handle the maximum output voltage plus any ring- ing at the switching node caused by the diode parasitic ca- pacitance and lead inductance. Selection of Power Inductor In fixed switching frequency boost converter applications, the inductance is determined by the allowable peak-to-peak in- ductor ripple current, Δi L(p-p) of the maximum load current and the switching frequency. The duty cycle, D is evaluated first at both V IN(MIN) and VIN(MAX). Then the full load average in- ductor current is calculated at both voltages respectively. With the maximum average inductor current, the allowable induc- tor ripple current is determined. Finally, the inductance value can be calculated and an off-the-shelf inductance value clos- est to the calculated value must be selected. The calculation only gives the inductance required but not the size of the in- ductor, the inductor selected must be capable to handle the maximum peak inductor current without saturating the induc- tor even at high temperature. The maximum peak inductor current is equal to the maximum average inductor current plus one half of the maximum allowable inductor ripple current, Δi L(p-p). Selection of Output Capacitor The output capacitor in a boost converter supplies current to the load during the MOSFET on-time and filters the AC com- ponents of the load current during the off-time. The selection of this capacitor determines the steady state output voltage ripple, ΔV OUT. The magnitude of this voltage ripple is com- prised of three components. The first part of the ripple voltage is the surge current created during the boost diode turns on. The second part is due to the charging and discharging of the output capacitor through the boost diode and the final part is caused by the flow of inductor current through the output capacitor's Equivalent Series Resistance, ESR. Both part 1 and part 3 are related to ESR, in case low ESR ceramic ca- pacitors are used, the contribution of these two parts be- comes insignificant. The output voltage ripple can be estimated by the equation in below. Where I OUT is the load current, D is the duty ratio and FSW is the converter switching frequency. From the equation in above, the relationships between differ- ent parameters are obvious. A higher output capacitance can reduce the output voltage ripple; however this can slow down the power-up time and the system transient respond. The choice of the output capacitor depends mainly on the appli- cation specifications. For most of the cases, multiple itera- tions are required to come up with an appropriate value. 13 www.national.com |
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