STGIPS20K60 datasheet(7/19 Pages) STMICROELECTRONICS

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STGIPS20K60

Electrical characteristics

Doc ID 16098 Rev 2

7/19

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Note:

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are

the switching time of IGBT itself under the internally given gate driving condition.

Table 7.

Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 12 A

2.2

2.75

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 12 A, TJ = 125 °C

-1.8

ICES

Collector-cut off current

(VIN

(1)= 0 “logic state”)

VCE = 600 V, VCC = VBoot = 15 V

100

µA

Diode forward voltage

VIN

(1) = 0 “logic state”, I

C = 12 A

3.8

Inductive load switching time and energy

ton

Turn-on time

VPN = 300 V,

VCC = Vboot = 15 V,

VIN

(1) = 0 ÷ 5 V,

IC = 12 A

(see

Figure 3)

300

tc(on)

Crossover time (on)

150

toff

Turn-off time

730

tc(off)

Crossover time (off)

170

trr

Reverse recovery time

Eon

Turn-on switching losses

290

µJ

Eoff

Turn-off switching losses

250

Applied between

HINi, LINi and GND for i = U, V, W. (LIN inputs are active-low).

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