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BD234 Datasheet(PDF) 2 Page - ON Semiconductor

Part # BD234
Description  Plastic Medium Power Bipolar Transistors
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD234 Datasheet(HTML) 2 Page - ON Semiconductor

  BD234 Datasheet HTML 1Page - ON Semiconductor BD234 Datasheet HTML 2Page - ON Semiconductor BD234 Datasheet HTML 3Page - ON Semiconductor BD234 Datasheet HTML 4Page - ON Semiconductor  
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BD237 (NPN), BD234 (PNP), BD238 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Type
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
V(BR)CEO
BD237, BD238
BD234
80
45
−
−
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
ICBO
BD237, BD238
BD234
−
−
0.1
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
−
1.0
mAdc
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
hFE1
hFE2
−
−
40
25
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
−
0.6
Vdc
Base−Emitter On Voltage (Note 1)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
−
−
1.3
Vdc
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
−
3.0
−
MHz
1. Pulse Test: Pulse Width
x 300 ms, Duty Cycle x 2.0%.
Figure 1. Active Region Safe Operating Area
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
3
1
0.1
3
10
30
100
0.3
TJ = 150°C
dc
5 ms
1
100 ms
1 ms
BD237
BD236
The Safe Operating Area Curves indicate IC−VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To
insure
operation
below
the
maximum
TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0
0.2
0.8
0.6
0.4
0.2
1.0
2.0
10
30
50
200
IC = 0.1 A
0.25 A
1.0 A
0.5 A
0.3
0.5
100
20
3.0
5.0
TJ = 25°C



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