MTP12P10 datasheet(2/6 Pages) ONSEMI

2 / 6 page

MTP12P10

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)

V(BR)DSS

100

−

Vdc

Zero Gate Voltage Drain Current

(VDS = Rated VDSS, VGS = 0)

(VDS = Rated VDSS, VGS = 0, TJ = 125°C)

IDSS

−

100

mAdc

Gate−Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

−

100

nAdc

Gate−Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)

TJ = 100°C

VGS(th)

2.0

1.5

4.5

4.0

Vdc

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 6.0 Adc)

RDS(on)

−

0.3

Drain−Source On−Voltage (VGS = 10 V)

(ID = 12 Adc)

(ID = 6.0 Adc, TJ = 100°C)

VDS(on)

−

4.2

3.8

Vdc

Forward Transconductance (VDS = 15 V, ID = 6.0 A)

gFS

2.0

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0, f = 1.0 MHz)

See Figure 10

Ciss

−

920

Output Capacitance

Coss

−

575

Reverse Transfer Capacitance

Crss

−

200

SWITCHING CHARACTERISTICS (Note 1) (TJ = 100°C)

Turn−On Delay Time

(VDD = 25 V, ID = 0.5 Rated ID, RG = 50 W)

See Figures 12 and 13

td(on)

−

Rise Time

−

150

Turn−Off Delay Time

td(off)

−

150

Fall Time

−

150

Total Gate Charge

(VDS = 0.8 Rated VDSS, ID = Rated ID, VGS = 10 V)

See Figure 11

33 (Typ)

Gate−Source Charge

Qgs

16 (Typ)

−

Gate−Drain Charge

Qgd

17 (Typ)

−

SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1)

Forward On−Voltage

(IS = Rated ID, VGS = 0)

VSD

4.0 (Typ)

5.5

Vdc

Forward Turn−On Time

ton

Limited by stray inductance

Reverse Recovery Time

trr

300

(Typ)

−

INTERNAL PACKAGE INDUCTANCE (TO−204)

Internal Drain Inductance, (Measured from the contact screw on the header closer to the

source pin and the center of the die)

5.0 (Typ)

−

Internal Source Inductance

(Measured from the source pin, 0.25

″ from the package

to the source bond pad)

12.5

(Typ)

−

INTERNAL PACKAGE INDUCTANCE (TO−220)

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

3.5 (Typ)

4.5 (Typ)

−

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

7.5 (Typ)

−

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

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