MTP12P10 datasheet(3/6 Pages) ONSEMI

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MTP12P10

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TYPICAL ELECTRICAL CHARACTERISTICS

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 2. Gate−Threshold Voltage Variation

With Temperature

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. Transfer Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Normalized Breakdown Voltage

versus Temperature

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance versus Drain Current

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On−Resistance Variation

With Temperature

1.2

1.1

0.9

0.8

−50

−25

100

125

150

1.6

1.2

0.8

0.4

−50

−75

100

125

150

0.5

0.4

0.3

0.2

0.1

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

−50

−25

100

125

150

TJ = 25°C

VGS = −20 V

8 V

10 V

7 V

6 V

5 V

VDS = VGS

ID = 1 mA

VDS = 20 V

TJ = −55°C

°C

100

°C

VGS = 0

ID = 0.25 mA

TJ = 100°C

°C

−55

°C

VGS = 15 V

VGS = 10 V

ID = 6 A

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