TTC007

2010-02-08

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

TTC007

High-Speed Switching Applications

DC-DC Converter Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

50

V

Emitter-base voltage

7

V

DC

1

Collector current

Pulse

2

A

Base current

0.1

A

t = 10 s

1.1

Collector power dissipation

DC

(Note 1)

0.7

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1: Mounted on FR4 board (glass epoxy; 645 mm

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

－

JEITA

－

TOSHIBA

2-3S1C

Weight: 0.01 g (typ.)

1. BASE

2. EMITTER

3. COLLECTOR