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2SC5291 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC5291 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC5291 No.5282-2/4 ITR08047 IC -- VBE 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.4 0.8 1.2 1.6 VCE=5V 100 1000 10 ITR08048 hFE -- IC 35 3 72 0.1 7 35 2 0.01 72 1.0 2 3 5 7 5 7 2 3 VCE=5V Ta=75°C 25°C --25°C ITR08045 ITR08046 IC -- VCE 012 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IB=0 50mA 40mA 30mA 20mA 10mA 5mA 2mA 1mA IC -- VCE 010 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 IB=0 4.0mA 3.5mA 3.0mA 2.5mA 1.5mA 0.5mA 4.5mA 2.0mA 1.0mA Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit DC Current Gain hFE1VCE=5V, IC=100mA 100 400 hFE2VCE=5V, IC=10mA 90 Gain-Bandwidth Product fT VCE=10V, IC=50mA 120 MHz Output Capacitance Cob VCB=10V, f=1MHz 14 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 0.13 0.45 V Base-to-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA 0.85 1.2 V Turn-ON Time ton See specified Test Circuit 4.0 ns Storage Time tstg See specified Test Circuit 1.2 µs Fall Time tf See specified Test Circuit 8.0 ns * : The 2SC5291 is classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit PW=20 µs D.C.= ≤1% INPUT VCC=100V 50 Ω RB IB1 IB2 100 µF 470 µF VBE= --5V VR + + RL OUTPUT 10IB1=--10IB2=IC=700mA RL=140Ω, RB=14Ω at IC=700mA |
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