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AT25DF081A Datasheet(PDF) 45 Page - ATMEL Corporation |
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AT25DF081A Datasheet(HTML) 45 Page - ATMEL Corporation |
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45 / 53 page ![]() 45 8715B–SFLSH–8/10 Atmel AT25DF081A [Preliminary] 14.6 Program and Erase Characteristics Notes: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles 2. Not 100% tested (value guaranteed by design and characterization) 14.7 Power-up Conditions 14.8 Input Test Waveforms and Measurement Levels 14.9 Output Test Load Symbol Parameter Min Typ Max Units t PP (1) Page Program Time (256-Bytes) 1.0 3.0 ms t BP Byte Program Time 7 µs t BLKE (1) Block Erase Time 4-Kbytes 50 200 ms 32-Kbytes 250 600 64-Kbytes 400 950 t CHPE (1)(2) Chip Erase Time 16 28 sec t OTPP (1) OTP Security Register Program Time 200 500 µs t WRSR (2) Write Status Register Time 200 ns Symbol Parameter Min Max Units t VCSL Minimum V CC to Chip Select Low Time 100 µs t PUW Power-up Device Delay Before Program or Erase Allowed 10 ms V POR Power-on Reset Voltage 1.5 2.5 V AC DRIVING LEVELS AC MEASUREMENT LEVEL 0.1V CC V CC/2 0.9V CC tR, tF < 2 ns (10% to 90%) DEVICE UNDER TEST 15pF (frequencies above 70MHz) or 30pF |
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