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SST25WF080 Datasheet(PDF) 15 Page - Silicon Storage Technology, Inc |
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SST25WF080 Datasheet(HTML) 15 Page - Silicon Storage Technology, Inc |
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15 / 29 page ![]() Advance Information 8Mbit 1.8V SPI Serial Flash SST25WF080 15 ©2010 Silicon Storage Technology, Inc. S71203-03-000 04/10 64-KByte Block-Erase The Block-Erase instruction clears all bits in the selected 64 KByte block to FFH. A Block-Erase instruction applied to a protected memory area is ignored. Prior to any Write oper- ation, the Write-Enable (WREN) instruction must be exe- cuted. CE# must remain active low for the duration of any command sequence. The Block-Erase instruction is initi- ated by executing an 8-bit command, D8H, followed by address bits [A23-A0]. Address bits [AMS-A16] (AMS =Most Significant Address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. Poll the Busy bit in the software status register or wait TBE for the completion of the internal self-timed Block-Erase. See Fig- ure 16 for the Block-Erase sequences. FIGURE 16: 64-KByte Block-Erase Sequence Chip-Erase The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction is ignored if any of the mem- ory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence. The Chip-Erase instruction is initiated by executing an 8-bit command, 60H or C7H. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TCE for the completion of the internal self-timed Chip-Erase cycle. See Figure 17 for the Chip-Erase sequence. FIGURE 17: Chip-Erase Sequence CE# SO SI SCK ADDR 01 2 3 4 5 6 7 8 ADDR ADDR D8 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 1203 F15.0 MSB MSB CE# SO SI SCK 01 2 3 4 5 6 7 60 or C7 HIGH IMPEDANCE MODE 0 MODE 3 1203 F16.0 MSB |
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