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LM5109ASD Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM5109ASD
Description  High Voltage 1A Peak Half Bridge Gate Driver
PDF  9 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5109ASD Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD to VSS
-0.3V to 18V
HB to HS
−0.3V to 18V
LI or HI to V
SS
−0.3V to V
DD +0.3V
LO to V
SS
−0.3V to V
DD +0.3V
HO to V
SS
V
HS −0.3V to VHB +0.3V
HS to V
SS (Note 6)
−5V to 90V
HB to V
SS
108V
Junction Temperature
-40˚C to +150˚C
Storage Temperature Range
−55˚C to +150˚C
ESD Rating HBM (Note 2)
1.5 kV
Recommended Operating
Conditions
V
DD
8V to 14V
HS (Note 6)
−1V to 90V
HB
V
HS +8V to VHS +14V
HS Slew Rate
< 50 V/ns
Junction Temperature
−40˚C to +125˚C
Electrical Characteristics
Specifications in standard typeface are for T
J = +25˚C, and those in boldface type apply over the full operating junction tem-
perature range. Unless otherwise specified, V
DD =VHB = 12V, VSS =VHS = 0V, No Load on LO or HO (Note 4).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
I
DD
V
DD Quiescent Current
LI = HI = 0V
0.3
0.6
mA
I
DDO
V
DD Operating Current
f = 500 kHz
1.8
2.9
mA
I
HB
Total HB Quiescent Current
LI = HI = 0V
0.06
0.2
mA
I
HBO
Total HB Operating Current
f = 500 kHz
1.4
2.8
mA
I
HBS
HB to V
SS Current, Quiescent
V
HS =VHB = 90V
0.1
10
µA
I
HBSO
HB to V
SS Current, Operating
f = 500 kHz
0.5
mA
INPUT PINS LI and HI
V
IL
Low Level Input Voltage Threshold
0.8
1.8
V
V
IH
High Level Input Voltage Threshold
1.8
2.2
V
R
I
Input Pulldown Resistance
100
200
500
k
Ω
UNDER VOLTAGE PROTECTION
V
DDR
V
DD Rising Threshold
V
DDR =VDD -VSS
6.0
6.7
7.4
V
V
DDH
V
DD Threshold Hysteresis
0.5
V
V
HBR
HB Rising Threshold
V
HBR =VHB -VHS
5.7
6.6
7.1
V
V
HBH
HB Threshold Hysteresis
0.4
V
LO GATE DRIVER
V
OLL
Low-Level Output Voltage
I
LO = 100 mA
V
OHL =VLO –VSS
0.38
0.65
V
V
OHL
High-Level Output Voltage
I
LO = −100 mA,
V
OHL =VDD–VLO
0.72
1.20
V
I
OHL
Peak Pullup Current
V
LO = 0V
1.0
A
I
OLL
Peak Pulldown Current
V
LO = 12V
1.0
A
HO GATE DRIVER
V
OLH
Low-Level Output Voltage
I
HO = 100 mA
V
OLH =VHO–VHS
0.38
0.65
V
V
OHH
High-Level Output Voltage
I
HO = −100 mA
V
OHH =VHB–VHO
0.72
1.20
V
I
OHH
Peak Pullup Current
V
HO = 0V
1.0
A
I
OLH
Peak Pulldown Current
V
HO = 12V
1.0
A
THERMAL RESISTANCE
θ
JA
Junction to Ambient
SOIC-8 (Note 3), (Note 5)
160
˚C/W
LLP-8 (Note 3), (Note 5)
40
www.national.com
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