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DBD10 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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DBD10 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() DBD10 No.7030-2/3 1.0 10 0 10 20 30 40 50 23 5 7 23 5 7 100 IFSM -- n 50Hz 0 1.2 0 0.6 0.4 0.2 1.0 0.8 160 20 40 60 80 100 120 140 IO -- Ta 0.01 0.2 0.4 0.6 0.8 1.0 0 0.1 10 7 5 3 2 1.0 7 5 3 2 7 5 3 2 1.6 1.2 1.4 IF -- VF IT03617 IT03618 IT03619 0 0 0.5 1.0 1.5 2.0 3.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 PF -- IO IT03620 Forward Voltage, VF -- V Number of Cycle at 50Hz -- n Average Forward Current, IO -- A Ambient Temperature, Ta -- °C Resisti ve load Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit DBD10C DBD10G Peak Reverse Voltage VRM 200 600 V Average Rectified Current IO Ta=25 °C → 1.0 A Surge Forward Current IFSM 50Hz sine wave 1cycle → 30 A Junction Temperature Tj → 150 °C Storage Temperature Tstg → --40 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Forward Voltage VF IF=0.5A 1.05 V Reverse Current IR VR : At each VRM 10 µA Thermal Resistance Rth(j-l) Junction-Lead 15 °C / W Thermal Resistance Rth(j-a) Junction-Ambient 68 °C / W |
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