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BSP170P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP170P Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page ![]() BSP 170 P Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 328 410 pF Output capacitance C oss - 105 135 Reverse transfer capacitance C rss -38 48 Turn-on delay time t d(on) -14 21 ns Rise time t r -28 42 Turn-off delay time t d(off) - 92 138 Fall time t f -60 90 Gate Charge Characteristics Gate to source charge Q gs - -1.4 -1.9 nC Gate to drain charge Q gd - -4.9 -7.4 Gate charge total Q g - -10 -14 Gate plateau voltage V plateau - -4.34 - V Reverse Diode Diode continuous forward current I S - - -1.98 A Diode pulse current I S,pulse - - -7.6 Diode forward voltage V SD V GS=0 V, I F=-1.9 A, T j=25 °C - -0.83 -1.1 V Reverse recovery time t rr -36 54 ns Reverse recovery charge Q rr -41 62 nC T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=- 10 V, I D=-1.9 A, R G=6 Ω V DD=-48 V, I D=-1.9 A, V GS=0 to -10 V V R=30 V, I F=|I S|, di F/dt =100 A/µs Rev 2.52 page 3 2009-02-16 |
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