BSP170P datasheet(2/9 Pages) INFINEON

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BSP 170 P

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction -soldering point

R thJS

K/W

SMD version, device on PCB:

R thJA

minimal footprint

110

K/W

6 cm

2 cooling area1)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250 µA

-60

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-250 µA

-2.1

-3

-4

Zero gate voltage drain current

I DSS

V DS=-60 V, V GS=0 V,

T j=25 °C

-0.1

-1

µA

V DS=-60 V, V GS=0 V,

T j=125 °C

-10

-100

Gate-source leakage current

I GSS

V GS=-20 V, V DS=0 V

-10

-100

Drain-source on-state resistance

R DS(on)

V GS=-10 V, I D=-1.9 A

239

300

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-1.9 A

1.3

2.6

1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB

is vertical without blown air.

Values

Rev 2.52

page 2

2009-02-16

BSP170P Datasheet(PDF) 2 Page - Infineon Technologies AG

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