NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active

area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output

linearity and wide dynamic range.

The photodiodes of S3901 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3904 series also

have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series: 128

(S3901-128Q), 256 (S3901-256Q, S3904-256Q), 512 (S3901-512Q, S3904-512Q) and 1024 (S3904-1024Q). Quartz glass is the standard window

material.

Features

l Wide active area

Pixel pitch: 50 µm (S3901 series)

25 µm (S3904 series)

Pixel height: 2.5 mm

l High UV sensitivity with good stability

l Low dark current and high saturation charge allow a long

integration time and a wide dynamic range at room temperature

l Excellent output linearity and sensitivity spatial uniformity

l Lower power consumption: 1 mW max.

l Start pulse and clock pulses are CMOS logic compatible

Applications

l Multichannel spectrophotometry

l Image readout system

IMAGE

SENSOR

NMOS linear image sensor

Current output, high UV sensitivity, excellent linearity, low power consumption

S3901/S3904 series

Oxidation silicon

N type silicon

P type silicon

S3901 series: a=50 µm, b=45 µm

S3904 series: a=25 µm, b=20 µm

b

a

KMPDC0020EA

s Equivalent circuit

Vss

Start

st

Clock

Clock

1

2

Active

photodiode

Saturation

control gate

Saturation

control drain

Dummy diode

Dummy video

Active video

End of scan

Degital shift register

(MOS shift register)

s Active area structure

KMPDA0059EA

s Absolute maximum ratings

Parameter

Symbol

Value

Unit

Input pulse (

φ1, φ2, φst) voltage

V

φ

15

V

P

1

mW

Topr

-40 to +65

°C

Storage temperature

Tstg

-40 to +85

°C

*1: V

φ=5.0 V

*2: No dew

1