Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Epitaxial Planar Silicon Composite Transistor

High-Frequency Low-Noise Amplifier,

Differential Amplifier Applications

Ordering number:ENN6217

FH103

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N0199TS (KOTO) TA-1706 No.6217–1/4

0 to 0.1

0.65

2.0

0.25

12

54

0.15

3

6

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2149

[FH103]

Features

· Composite type with 2 transistors contained in the

MCP package currently in use, improving the

mounting efficiency greatly.

· The FH103 is formed with two chips, being equiva-

lent to the 2SC4867, placed in one package.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Collector1

2 : Emitter1

3 : Collector2

4 : Emitter2

5 : Base2

6 : Base1

SANYO : MCP6

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m

Continued on next page.

Note) The specifications shown above are for each individual transistor.

Marking : 103

B2

B1

Tr1

Tr2

E2

C1

E1

C2

×0.8mm) 1unit

×0.8mm)