Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP/NPN Epitaxial Planar Silicon Transistors

Push-Pull Circuit Applications

Ordering number:ENN6457

FP207

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92500TS (KOTO) TA-2925 No.6457–1/5

Package Dimensions

unit:mm

2097B

[FP207]

Features

· Composite type with a PNP transistor and an NPN

transistor contained in one package, facilitating high-

density mounting.

· Each device incorporated in the FP207 is equivalent

to the 2A1729 and to the 2SC4520, respectively.

˚C

˚C

1 : Base 1 (PNP TR)

2 : Collector 1 (PNP TR)

3 : Emitter Common

4 : Collector 2 (NPN TR)

5 : Base 2 (NPN TR)

6 : Collector 2 (NPN TR)

7 : Collector 1 (PNP TR)

SANYO : PCP5 (Top view)

×0.8mm) 1unit

Marking : 207

Continued on next page.

4.5

3.4

2.8

1.8

1.0

7

6

0.5

0.5

1.75

1.75

3.5

1

2

3

4

5

0.3

1.5

0.4

0 to 0.1

0.2

1.2

Specifications

( ) : PNP

Absolute Maximum Ratings at Ta = 25˚C

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

o

t

c

e

ll

o

CV

O

B

C

0

5

)

–

(V

e

g

a

t

l

o

V

r

e

t

t

i

m

E

-

o

t

-

r

o

t

c

e

ll

o

CV

O

E

C

0

4

)

–

(V

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

e

t

t

i

m

EV

O

B

E

5

)

–

(V

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CIC

5

.

1

)

–

(A

)

e

s

l

u

P

(

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CI P

C

3

)

–

(A

t

n

e

r

r

u

C

e

s

a

BIB

0

0

3A

m

n

o

i

t

a

p

i

s

s

i

D

r

o

t

c

e

ll

o

CPC

8

.

0W

n

o

i

t

a

p

i

s

s

i

D

r

e

w

o

P

l

a

t

o

TPT

1

.

1W

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

0

5

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

0

5

1

+

o

t

5

5

–

×0.8mm)

Electrical Characteristics at Ta = 25˚C

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

t

i

d

n

o

C

s

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

t

n

e

r

r

u

C

f

f

o

t

u

C

r

o

t

c

e

ll

o

CI

O

B

C

V B

C

I

,

V

0

4

)

–

(

=

E 0

=1

)

–

(A

µ

t

n

e

r

r

u

C

f

f

o

t

u

C

r

e

t

t

i

m

EI

O

B

E

V B

E

I

,

V

3

)

–

(

=

C 0

=1

)

–

(A

µ

n

i

a

G

t

n

e

r

r

u

C

C

Dh E

F

V E

C

I

,

V

2

)

–

(

=

C

A

m

0

0

1

)

–

(

=0

0

10

0

4

t

c

u

d

o

r

P

h

t

d

i

w

d

n

a

B

-

n

i

a

GfT

V E

C

I

,

V

2

)

–

(

=

C

A

m

0

0

1

)

–

(

=0

0

3z

H

M

e

c

n

a

t

i

c

a

p

a

C

t

u

p

t

u

Ob

o

CV B

C

z

H

M

1

=

f

,

V

0

1

)

–

(

=3

1

)

8

1

(F

p