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TLE42764 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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TLE42764 Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 17 page ![]() Data Sheet 5 Rev. 1.1, 2009-10-09 TLE42764 General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Functional Range Absolute Maximum Ratings1) T j = -40 °C to 150 °C; all voltages with respect to ground, (unless otherwise specified) 1) not subject to production test, specified by design Pos. Parameter Symbol Limit Values Unit Test Condition Min. Max. Input I, Enable EN 4.1.1 Voltage V I -42 45 V – Voltage Adjust Input VA 4.1.2 Voltage V VA -0.3 10 V – Output Q 4.1.3 Voltage V Q -1 40 V – Temperature 4.1.4 Junction temperature T j -40 150 °C– 4.1.5 Storage temperature T stg -50 150 °C– ESD Susceptibility 4.1.6 ESD Absorption V ESD,HBM -3 3 kV Human Body Model (HBM)2) 2) ESD susceptibility Human Body Model “HBM” according to AEC-Q100-002 - JESD22-A114 4.1.7 V ESD,CDM -1000 1000 V Charge Device Model (CDM)3) at all pins 3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1 Pos. Parameter Symbol Limit Values Unit Remarks Min. Max. 4.2.1 Input voltage V I 5.5 40 V TLE42764GV50, TLE42764DV50 4.2.2 Input voltage V I V Q + 0.5 40 V TLE42764GV, TLE42764DV; V Q > 4 V 4.2.3 Input voltage V I 4.5 40 V TLE42764GV, TLE42764DV; V Q < 4 V |
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