2N7334

IRFG110

Gate – Source Voltage

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

dv/dt

Operating and Storage Temperature Range

Thermal Resistance Junction to Case

Thermal Resistance Junction-to-Ambient

±20V

1.A

0.6A

4A

1.4W

0.011W/°C

75mJ

5.5V/ns

–55 to 150°C

6.25°C/W

175°C/W

MECHANICAL DATA

Dimensions in mm (inches)

14

1

8

7

2.134

(0.084)

1.422 ± 0.102

(0.056 ± 0.004)

2.54

(0.100)

0.457 ± 0.102

(0.018 ± 0.004)

19.507 ± 0.432

(0.768 ± 0.017)

14 LEAD MOULDED DIP PACKAGE

Notes

1) Pulse Test: Pulse Width

≤ 300µs, δ≤ 2%

14 LEAD DUAL IN LINE QUAD

N-CHANNEL

POWER MOSFETS

FEATURES

• AVALANCHE ENERGY RATED

• HERMETICALLY SEALED

• DYNAMIC dv/dt RATING

• SIMPLE DRIVE REQUIREMENTS

• FOR AUTOMATIC INSERTION

• SIMPLE DRIVE REQUIREMENTS

• EASE OF PARALLELING

• 4 N-CHANNEL CO-PACKAGED HEXFETS

• LIGHTWEIGHT

N-CHANNEL

1—Drain 1

2—Source 1

3—Gate 1

N-CHANNEL

5—Gate 2

6—Source 2

7—Drain 2

N-CHANNEL

8—Drain 3

9—Source3

10—Gate 3

N-CHANNEL

12—Gate 4

13—Source 4

14—Drain 4

±100V

1A

0.7

Ω

Ω

11,4—NC

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Document Number 5829

Issue 1