2N7334

IRFG110

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

100

0.13

0.70

0.80

24

0.86

25

250

100

–100

180

82

15

15

7.5

7.5

20

25

40

40

1

4

1.5

200

0.83

Negligible

4.0

6.0

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Diode Forward Voltage 1

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

V

V/°C

Ω

V

Ω

µA

nA

pF

nC

ns

A

V

ns

µC

nH

∆BV

DSS

∆T

J

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

≤ 300µs, δ≤ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

PACKAGE CHARACTERISTICS

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Document Number 5829

Issue 1