STD2NC45-1 datasheet(3/13 Pages) STMICROELECTRONICS

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STD2NC45-1

Electrical ratings

Doc ID 9103 Rev 4

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

450

VGS

Gate- source voltage

±30

Drain current (continuous) at TC = 25°C

1.5

Drain current (continuous) at TC = 100°C

0.95

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.24

W/°C

dv/dt (2)

ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

–65 to 150

°C

Max. operating junction temperature

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

4.1

°C/W

Rthj-amb

Thermal resistance junction-ambient max

100

°C/W

Maximum lead temperature for soldering purpose

275

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

1.5

EAS

Single pulse avalanche energy

(starting Tj=25°C, ID=IAS, VDD=50V)

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