STD2NC45-1 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STD2NC45-1

4/13

Doc ID 9103 Rev 4

Electrical characteristics

(TCASE = 25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

450

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC = 125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 30V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

2.3

3.7

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 0.5A

4.1

4.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID = 0.5A

-1.1

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz, VGS = 0

160

27.5

4.7

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 360V, ID = 1.5A,

VGS = 10V, RG =4.7Ω

(see Figure 17)

1.3

3.2

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

Rise time

VDD = 225V, ID = 0.5A

RG =4.7Ω VGS = 10V

(see Figure 16)

6.7

tr(Voff)

Off-voltage rise time

Fall time

Cross-over time

VDD = 360V, ID = 1.5A,

RG =4.7Ω, VGS = 10V

(see Figure 16)

8.5

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