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2SC3665 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3665 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC3665 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SA1425. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 80 mA Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 ― ― V DC current gain hFE (Note) VCE = 5 V, IC = 100 mA 80 ― 240 Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA ― ― 1.0 V Base-emitter voltage VBE VCE = 5 V, IC = 500 mA ― ― 1.0 V Transition frequency fT VCE = 5 V, IC = 100 mA ― 120 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― ― 30 pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) C3665 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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