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CTA2N1P Datasheet(PDF) 2 Page - Diodes Incorporated |
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CTA2N1P Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DS30295 Rev. 7 - 2 2 of 6 www.diodes.com CTA2N1P © Diodes Incorporated Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V Base Cutoff Current IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V ON CHARACTERISTICS (Note 5) DC Current Gain hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Ccb ⎯ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 k Ω Voltage Feedback Ratio hre 0.1 8.0 x 10 -4 Small Signal Current Gain hfe 40 500 ⎯ Output Admittance hoe 1.0 30 μS VCE = 10V, IC = 1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 15 ns Rise Time tr ⎯ 20 ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.8 ⎯ -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 10 Ω VGS = -5V, ID = 0.100A Forward Transconductance gFS .05 ⎯ ⎯ S VDS = -25V, ID = 0.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 45 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns Turn-Off Delay Time tD(OFF) ⎯ 18 ⎯ ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Notes: 5. Short duration pulse test used to minimize self-heating effect. |
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