2N7002T

Document number: DS30301 Rev. 11 - 2

2 of 4

www.diodes.com

March 2009

© Diodes Incorporated

2N7002T

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

60

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1.0

500

µA

Gate-Body Leakage

⎯

⎯

±10

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

⎯

2.0

V

Static Drain-Source On-Resistance

⎯

2.0

4.4

7.5

13.5

Ω

On-State Drain Current

0.5

1.0

⎯

A

Forward Transconductance

80

⎯

⎯

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

22

50

pF

Output Capacitance

⎯

11

25

pF

Reverse Transfer Capacitance

⎯

2.0

5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

⎯

7.0

20

ns

Turn-Off Delay Time

⎯

11

20

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

0

0.2

0.1

0.4

0.3

0.5

0.6

0.7

0.8

0.9

1

01

2

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

DS

V

= 10,7,6V

GS

V

= 5V

GS

V

= 4V

GS

V

= 3V

GS

0.6

1

1.4

1.8

00.2

I , DRAIN-SOURCE CURRENT (A)

Fig. 2 On-Resistance Variation with Gate Voltage

and Drain-Source Current

D

V

= 3V

GS

V

= 4V

GS

V

= 5, 6, 7, 10V

GS

2.2

0.4

0.6

0.8

1.0

2.6

0.7

0.8

0.9

1.1

1

1.2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 3 Gate Threshold Variation with Temperature

J

°

V

= V

I = 250µA

DS

GS

D

0.4

0.8

0.6

1.2

1.8

1.6

1.4

1

2.2

2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 4 On-Resistance Variation with Temperature

J

°

V

= 10V

I = 500mA

GS

D