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DMMT5401 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMMT5401
Description  MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMMT5401 Datasheet(HTML) 2 Page - Diodes Incorporated

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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
DS30437 Rev. 6 - 2
2 of 4
www.diodes.com
DMMT5401
© Diodes Incorporated
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
V(BR)CBO
-160
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-150
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -10μA, IC = 0
Collector Cutoff Current
ICBO
⎯
-50
nA
μA
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100°C
Emitter Cutoff Current
IEBO
⎯
-50
nA
VEB = -3.0V, IC = 0
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
hFE
50
60
50
⎯
240
⎯
⎯
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.2
-0.5
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
6.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
40
200
⎯
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = -10V, IC = -10mA,
f = 100MHz
Noise Figure
NF
⎯
8.0
dB
VCE = -5.0V, IC = -200μA,
RS = 10Ω, f = 1.0kHz
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, hFE, (matched at IC = -10mA and VCE = -5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage,
VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.
0
50
100
25
50
75
100
125
150
175
200
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
350
400
0
0.01
0.1
1.0
10.0
1
10
100
1,000
T = 25°C
A
T = -50°C
A
T = 150°C
A
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10



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