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DMN2004VK Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN2004VK
Description  DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2004VK Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN2004VK
Document number: DS30865 Rev. 4 - 2
2 of 6
www.diodes.com
July 2010
© Diodes Incorporated
DMN2004VK
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±1
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
0.5
⎯
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
0.4
0.5
0.7
0.55
0.70
0.9
Ω
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
Forward Transfer Admittance
|Yfs|
200
⎯
⎯
ms
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 5)
VSD
0.5
⎯
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
150
pF
VDS = 16V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
20
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
⎯
8.0
⎯
ns
VDD = 10V, RL = 47Ω,
ID = 200mA. VGEN = 4.5V,
RG = 10Ω
Rise Time
tr
⎯
13.3
⎯
ns
Turn-Off Delay Time
td(off)
⎯
53.5
⎯
ns
Fall Time
tf
⎯
36.1
⎯
ns
Notes:
5. Short duration pulse test used to minimize self-heating effect.
0
0
12
3
45
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2
GS
Reverse Drain Current vs. Source-Drain Voltage



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