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LB1824 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LB1824 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 9 page  Electrical Characteristics at Ta = 25°C, VCC = VM = 24 V Ratings Parameter Symbol Conditions min typ max Unit Current drain ICC1 34 50 mA ICC2 When stopped 8 11 mA Output saturation voltage VOsat1 IO = 1A 2.0 3.0 V VOsat2 IO = 2A 2.7 4.2 V Output leakage current IOleak 100 µA Output voltage VH IO = –10 mA 6.65 7.0 7.35 V 7 V fixed voltage output Voltage variation ∆VH1 VCC = 9.5 to 28 V 50 200 mV Load variation ∆VH2 IO = –5 to –20 mA 40 200 mV Output voltage VX IO = –5 mA 4.45 4.80 5.15 V 5 V fixed voltage output Voltage variation ∆VX1 VCC = 9.5 to 28 V 50 200 mV Load variation ∆VX2 IO = –5 to –20 mA 5 200 mV Output voltage VFG IO = –5 mA 3.65 4.0 4.35 V 4 V fixed voltage output Voltage variation ∆VFG1 VCC = 9.5 to 28 V 40 200 mV Load variation ∆VFG2 IO = –5 to –15 mA 110 200 mV Input bias current IHB –4 –1 µA Common mode input voltage range VICM 1.5 5.1 V Hall amplifier Hall input sensitivity 60 mVp-p Hysteresis ∆VIN 8 14 24 mV Input voltage low → high VSLH 7 mV Input voltage high → low VSHL –7 mV Output high level voltage VOH(CR) 2.8 3.1 3.4 V Oscillator Output low level voltage VOL(CR) 0.8 1.1 1.4 V Oscillator frequency f(CR) R = 56 k Ω, C = 1000 pF 15 kHz Amplitude V(CR) 2.0 Vp-p Current control operation Limiter VCC –VM 0.4 0.5 0.6 V Thermal shutdown operation Thermal shutdown operating temperature TSD Design target 150 180 °C Hysteresis ∆TSD 50 °C Input offset voltage VIO(FG) –10 +10 mV Input bias current IB(FG) –1 +1 µA Output high level voltage VOH(FG) IFG = –2 mA 5.5 6 V FG amplifier Output low level voltage VOL(FG) IFG = 2 mA 1 1.5 V FG input sensitivity 100x gain 3 mV Next stage Schmitt width 100 180 250 mV Operating frequency range 2 kHz Open loop gain f(FG) = 2 kHz 45 51 dB FGS output Output saturation voltage VO(FGS) IO(FGS) = 2 mA 0.1 0.5 V Output leakage current IL(FGS) VO = 5 V 10 µA Output high level voltage VOH(D) 4.0 4.3 V Speed discriminator Output low level voltage IOL(D) 0.8 1.1 V Number of counts 512 PLL output Output high level voltage VOH(P) 3.2 3.5 3.8 V Output low level voltage VOL(P) 1.2 1.5 1.8 V Lock detection Output low level voltage VOL(LD) ILD = 10 mA 0.15 0.5 V Locking range ±6.25 % Input bias current IB(INT) –0.4 +0.4 µA Output high level voltage VOH(INT) 3.7 4.3 V Integrator Output low level voltage VOL(INT) 0.8 1.2 V Open loop gain 60 dB Gain-bandwidth product 1.6 MHz Reference voltage –5% VX/2 5% V Crystal oscillator Operating frequency range fOSC 1 10 MHz Input high level voltage VIH(S/S) 4.0 V Start/stop pin Input low level voltage VIL(S/S) 1.5 V Pull-down resistance RD(S/S) 30 50 70 k Ω Input high level voltage VIH(F/R) 4.0 V Forward/reverse pin Input low level voltage VIL(F/R) 1.5 V Hysteresis ∆VIN 0.5 V Pull-down resistance RD(F/R) 30 50 70 k Ω LB1824 No. 4264-2/9 |
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