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FCX1051ATA Datasheet(PDF) 3 Page - Diodes Incorporated

Part # FCX1051ATA
Description  SOT89 NPN medium power transistor
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX1051ATA Datasheet(HTML) 3 Page - Diodes Incorporated

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FCX1051A
Issue 2 - July 2007
3
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (@ Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base
breakdown voltage
V(BR)CBO
150
V
IC = 100µA
Collector-emitter
breakdown voltage
VCES
150
V
IC = 100µA
Collector-emitter
breakdown voltage
VCEO
40
V
IC = 10mA
Collector-emitter
breakdown voltage
VCEV
150
V
IC =100µA, VEB = 1V
Emitter-base
breakdown voltage
V(BR)EBO
5
V
IE = 100µA
Collector cut-off
current
ICBO
0.3
10
nA
VCB = 120V
Emitter cut-off current
IEBO
0.3
10
nA
VEB = 4V
Collector emitter cut-
off current
ICES
0.3
10
nA
VCES = 120V
Collector-emitter
saturation voltage
VCE(sat)
17
25
mV
IC = 0.2A, IB = 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width=300 s. Duty cycle
2%.
85
120
mV
IC = 1A, IB = 10mA (*)
140
180
mV
IC = 2A, IB = 20mA (*)
170
250
mV
IC = 3A, IB = 40mA (*)
250
340
mV
IC = 5A, IB = 100mA (*)
Base-emitter saturation
voltage
VBE(sat)
880
1000
mV
IC = 3A, IB = 40mA (*)
Base-emitter turn-on
voltage
VBE(on)
840
950
mV
IC = 3A, VCE = 2V (*)
Static forward current
transfer ratio
hFE
290
440
1200
IC = 10mA, VCE = 2V (*)
270
450
IC = 1A, VCE = 2V (*)
270
360
IC = 3A, VCE = 2V (*)
130
220
IC = 5A, VCE = 2V (*)
40
55
IC = 10A, VCE = 2V (*)
Transition frequency
fT
155
MHz
IC = 50mA, VCE = 10V
f = 100MHz
Output capacitance
Cobo
27
40
pF
VCB = 10V, f = 1MHz
Switching times
ton
220
ns
IC = 3A, IB = 30mA, VCC = 10V
toff
540
ns
IC = 3A, IB = 30mA, VCC = 10V



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