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LB1929 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LB1929 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 12 page ![]() No. 7099-2/12 LB1929 Parameter Symbol Conditions Ratings Unit min typ max Supply current 1 ICC1 23 30 mA Supply current 2 ICC2 Stop mode 3.5 5 mA Output block Output saturation voltage 1 VOsat1 IO = 1.0 A, VO (SINK) + VO (SOURCE) 2.0 2.5 V Output saturation voltage 2 VOsat2 IO = 2.0 A, VO (SINK) + VO (SOURCE) 2.6 3.2 V Output leakage current IO leak 100 µA Lower diode forward voltage 1 VD1 ID = –1.0 A 1.2 1.5 V Lower diode forward voltage 2 VD2 ID = –2.0 A 1.5 2.0 V Regulator-voltage output Output voltage VREG IO = –5 mA 4.65 5.00 5.35 V Voltage regulation ∆VREG1 VCC = 9.5 to 28 V 30 100 mV Load regulation ∆VREG2 IO = –5 to –20 mA 20 100 mV Hall Amplifier Input bias current IHB –2 –0.5 µA Common-mode input voltage range VICM 1.5 VREG – 1.5 V Hall input sensitivity 80 mVp-p Hysteresis width ∆VIN 15 24 42 mV Input voltage L → H VSLH 12 mV Input voltage H → L VSHL –12 mV PWM oscillator circuit Output H level voltage VOH (PWM) 2.5 2.8 3.1 V Output L level voltage VOL (PWM) 1.2 1.5 1.8 V Oscillator frequency f (PWM) C = 3900pF 18 kHz Amplitude V (PWM) 1.05 1.30 1.55 Vp-p CSD circuit Operating voltage VOH (CSD) 3.6 3.9 4.2 V External C charge current ICHG –17 –12 –9 µA Operating time T (CSD) C = 10 µF, Design target value 3.3 s Current limiter operation Limiter VRF VCC–VM 0.45 0.5 0.55 V Thermal shutdown operation Thermal shutdown operating temperature TSD Design target value (junction temperature) 150 180 °C Hysteresis width ∆TSD Design target value (junction temperature) 50 °C Electrical Characteristics at Ta = 25°C, VCC = VM = 24 V Note*: These items are design target values and are not tested. Continued on next page. |
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