ET830 datasheet(1/5 Pages) ESTEK

Part #	ET830

Description	5 Amps竊?00Volts

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Manufacturer	ESTEK [Estek Electronics Co. Ltd]

Direct Link	http://www.estek.com.cn/en/index.asp

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ET830

5 Amps，

，

，500Volts

N-Channel MOSFET

■ Description

The ET830 N-Channel enhancement mode silicon gate

power

MOSFET is designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers

.

■ Features

RDS(ON) = 1.5 @VGS = 10 V

Low gate charge ( typical 20nC)

Fast switching capability

Avalanche energy specified

Improved dv/dt capability

■ Symbol

■ Absolute Maximum Ratings(T

c=25℃,unless otherwise specified)

Ratings

Parameter

Symbol

TO-220

TO-220F

Units

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

VGSS

±30

V

Tc=25℃

5.0

＊

A

Drain Currenet Continuous

Tc=100℃

ID

3.0

＊

A

Drain Current Pulsed

(Note 1)

IDP

20

＊

A

Repetitive

(Note 1)

EAR

7.6

mJ

Avalanche Energy

Single Pulse

(Note 2)

EAS

305

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Tc=25℃

76

40

W

Total Power Dissipation

Derate above 25℃

PD

0.6

0.32

W/℃

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-55~+150

℃

＊

Drain current limited by maximum junction temperature.

BEIJING ESTEK ELECTRONICS CO.,LTD

1

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