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ET830 Datasheet(PDF) 2 Page - Estek Electronics Co. Ltd

Part # ET830
Description  5 Amps竊?00Volts
PDF  5 Pages
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Manufacturer  ESTEK [Estek Electronics Co. Ltd]
Direct Link  http://www.estek.com.cn/en/index.asp
Logo ESTEK - Estek Electronics Co. Ltd

ET830 Datasheet(HTML) 2 Page - Estek Electronics Co. Ltd

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■ Thermal Characteristics
Ratings
Parameter
Symbol
TO-220
TO-220F
Units
Thermal Resistance Junction-Ambient
RthJA
62.5
Thermal Resistance, Case-to-Sink Typ.
RthCS
0.5
--
Thermal Resistance Junction-Case
RthJC
1.2
3.65
℃/W
■ Electrical Characteristics（T
J=25℃,unless Otherwise specified.）
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22 mH, IAS = 5.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2%
5. Essentially independent of operating temperature
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250µA
500
--
--
V
VDS=500V,VGS=0V
--
--
1
µA
Zero Gate Voltage Drain Current
IDSS
VDS=400V,TC=125℃
--
--
10
µA
Forward
VGS=30V,VDS=0V
--
--
100
nA
Gate-Body Leakage
Current
Reverse
IGSS
VGS=-30V,VDS=0V
--
--
-100
nA
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ID=250µA
--
0.6
--
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
--
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VDS=10V,ID=2.5A
--
1.10
1.5
Dynamic Characteristics
Input Capacitance
CISS
--
520
--
pF
Output Capacitance
COSS
--
80
--
pF
Reverse Transfer Capacitance
CRSS
VDS=25V,VGS=0V,
f=1MHZ
--
15
--
pF
Switching Characteristics
Turn-On Delay Time
tD(ON)
--
10
--
ns
Rise Time
tR
--
50
--
ns
Turn-Off Delay Time
tD(OFF)
--
50
--
ns
Fall Time
tF
VDD=250V,ID=5.0A,
RG=25
(Note 4, 5)
--
50
--
ns
Total Gate Charge
QG
--
20
--
nC
Gate-Source Charge
QGS
--
2.5
--
nC
Gate-Drain Charge
QGD
VDS=400V, ID=5.0A,
VGS=10V
(Note 4, 5)
--
10
--
nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD
VGS=0V,ISD=5.0A
--
--
1.4
V
Continuous Drain-Source Current
ISD
--
--
5.0
A
Pulsed Drain-Source Current
ISM
--
--
20.0
A
Reverse Recovery Time
tRR
--
260
--
ns
Reverse Recovery Charge
QRR
ISD=5.0A,
dISD/dt=100A/µs
(Note 4)
--
2.0
--
µC
ET830
BEIJING ESTEK ELECTRONICS CO.,LTD
2



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