BFU610F datasheet(2/12 Pages) NXP

2 / 12 page

BFU610F

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 11 January 2011

2 of 12

NXP Semiconductors

BFU610F

NPN wideband silicon RF transistor

1.4 Quick reference data

[1]

Tsp is the temperature at the solder point of the emitter lead.

[2]

Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).

Pinning information

Ordering information

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VCBO

collector-base voltage

open emitter

VCEO

collector-emitter voltage

open base

5.5

VEBO

emitter-base voltage

open collector

2.5

collector current

Ptot

total power dissipation

Tsp ≤ 90 °C

[1] -

136

hFE

DC current gain

IC =1mA; VCE =2V;

Tj =25 °C

135

180

CCBS

collector-base

capacitance

VCB =2V; f=1MHz

transition frequency

IC =4mA; VCE =2V;

f= 2GHz; Tamb =25 °C

-15

GHz

Gp(max)

maximum power gain

IC =5mA; VCE =2V;

f= 5.8GHz; Tamb =25 °C

[2] -

17.0

noise figure

IC =2mA; VCE =2V;

f= 5.8GHz;

S = Γopt;

Tamb =25 °C

-1.7

PL(1dB)

output power at 1 dB

gain compression

IC =10mA; VCE =1.5 V;

ZS =ZL =50 Ω;

f= 5.8GHz; Tamb =25 °C

-3

dBm

Table 2.

Discrete pinning

Description

Simplified outline

Graphic symbol

1emitter

2base

3emitter

collector

mbb159

1, 3

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BFU610F

plastic surface-mounted flat pack package; reverse

pinning; 4 leads

SOT343F

BFU610F Datasheet(PDF) 2 Page - NXP Semiconductors

BFU610F Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL