ZXTC6718MC

Document number: DS31927 Rev. 3 - 2

2 of 9

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December 2010

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ZXTC6718MC

Characteristic

Symbol

NPN

PNP

Unit

Collector-Base Voltage

40

-25

V

Collector-Emitter Voltage

20

-20

V

Emitter-Base Voltage

7

-7

V

Peak Pulse Current

12

-6

A

Continuous Collector Current

(Notes 3 & 6)

4.5

-3.5

A

Continuous Collector Current

(Notes 4 & 6)

5

-3.8

Base Current

1

A

Characteristic

Symbol

NPN

PNP

Unit

Power Dissipation

Linear Derating Factor

(Notes 3 & 6)

1.5

12

W

mW/

°C

(Notes 4 & 6)

2.45

19.6

(Notes 5 & 6)

1.13

8

(Notes 5 & 7)

1.7

13.6

Thermal Resistance, Junction to Ambient

(Notes 3 & 6)

83.3

°C/W

(Notes 4 & 6)

51.0

(Notes 5 & 6)

111

(Notes 5 & 7)

73.5

Thermal Resistance, Junction to Lead

(Notes 6 & 8)

17.1

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

3. For a dual device surface mounted on 28mm x 28mm (8cm

measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

4. Same as note (3), except the device is measured at t <5 sec.

5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm

6. For a dual device with one active die.

7. For dual device with 2 active die running at equal power.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).