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ZXTC6718MC Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXTC6718MC
Description  COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS
PDF  9 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTC6718MC Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXTC6718MC
Document number: DS31927 Rev. 3 - 2
4 of 9
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6718MC
NPN - Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
40
100
-
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
20
27
-
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7
8.2
-
V
IE = 100µA
Collector Cutoff Current
ICBO
-
-
100
nA
VCB = 30V
Emitter Cutoff Current
IEBO
-
-
100
nA
VEB = 6V
Collector Emitter Cutoff Current
ICES
-
-
100
nA
VCE = 16V
Static Forward Current Transfer Ratio
(Note 9)
hFE
200
300
200
100
400
450
360
180
-
-
-
-
-
-
-
-
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
Collector-Emitter Saturation Voltage
(Note 9)
VCE(sat)
-
8
90
115
190
210
15
150
135
250
300
mV
IC = 0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
IC = 3A, IB = 100mA
IC = 4.5A, IB = 125mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-
0.88
0.97
V
IC = 4.5A, VCE = 2V
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-
0.98
1.07
V
IC = 4.5A, IB = 125mA
Output Capacitance
Cobo
-
23
30
pF
VCB = 10V, f = 1MHz
Transition Frequency
fT
100
140
-
MHz
VCE = 10V, IC = 50mA,
f = 100MHz
Turn-on Time
ton
-
170
-
ns
VCC = 10V, IC = 3A
IB1 = IB2 = 10mA
Turn-off Time
toff
-
400
-
ns
Notes:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%.



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