2SC5460

2004-07-26

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5460

Dynamic Focus Applications

High-Voltage Switching Applications

High-Voltage Amplifier Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

800

V

Collector-emitter voltage

800

V

Emitter-base voltage

5

V

Collector current

50

mA

Base current

25

mA

Ta = 25°C

1.5

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

―

―

1.0

µA

Emitter cut-off current

―

―

10

µA

DC current gain

15

―

―

Collector-emitter saturation voltage

―

―

1.0

V

Base-emitter saturation voltage

―

―

1.5

V

Transition frequency

―

5.5

―

MHz

Collector output capacitance

―

2.2

―

pF

Note: When an external heat sink is used for the device, insulate using, for example, silicone rubber.

When an external heat sink is not used, Toshiba recommends that the plastic part be at least 2 mm away from

its surroundings.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8H1A

Weight: 0.82 g (typ.)