2SD1631

2010-03-10

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

2SD1631

Micro Motor Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

30

V

Collector-emitter voltage

30

V

Emitter-base voltage

10

V

Continuous collector current

1.5

A

Continuous base current

50

mA

Collector power dissipation

1000

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

BASE

EMITTER

COLLECTOR