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2SJ508 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SJ508 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 6 page ![]() 2SJ508 2009-09-29 4 Vth − Ta 0 −80 0 40 80 120 160 −40 −2.5 −0.5 −1.5 −1.0 −2.0 RDS (ON) − Ta 0 2.5 0.5 1.5 1.0 −40 −80 160 0 40 120 80 IDR − VDS 2.0 10 −0.1 −100 100 −1 −10 10000 0.4 0 0.8 1.2 1.6 −0.01 −0.1 −10 −1 1000 3.0 VGS = −4 V −10V Common source Pulse test ID = −0.5A Common source Ta = 25°C Pulse test VGS = 0 V −1 −10 −5 −3 Common source VDS = −10 V ID = −1mA Pulse test PD − Ta 2.0 0.5 1.0 1.5 0 0 80 40 160 120 Dynamic input/output characteristics −160 0 −120 −80 −40 0 4 6 2 −8 −4 −16 0 −12 8 10 Common source ID = −1A Ta = 25°C Pulse test VDD = −80V −40V −20V VDS VGS 200 ① 25.4mm×25.4mm×0.8mm Mounted on ceramic substrate ② Single ① ② Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) Capacitance – VDS Drain-source voltage VDS (V) Ambient temperature Ta (°C) Drain-source voltage VDS (V) |
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