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2SJ508 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SJ508
Description  Chopper Regulator, DC?묭C Converter and Motor Drive
PDF  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ508 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SJ508
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
−π−MOSV)
2SJ508
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance
: RDS (ON) = 1.34 Ω (typ.)
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Low leakage current : IDSS = −100 μA (max) (VDS = −100 V)
Enhancement mode
: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−100
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−100
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
−1
A
Drain current
Pulse (Note 1)
IDP
−3
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Single pulse avalanche energy
(Note 3)
EAS
136.5
mJ
Avalanche current
IAR
−1
A
Repetitive avalanche energy (Note 4)
EAR
0.05
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (ch−a)
250
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2−5K1B
Weight: 0.05 g (typ.)
Z
E
Part No.
(or abbreviation code)
Lot No.
Note 5
Note 5: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and
electronic equipment.


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