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2SJ508 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SJ508 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() 2SJ508 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L 2 −π−MOSV) 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 1.34 Ω (typ.) High forward transfer admittance : |Yfs| = 0.7 S (typ.) Low leakage current : IDSS = −100 μA (max) (VDS = −100 V) Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −100 V Drain−gate voltage (RGS = 20 kΩ) VDGR −100 V Gate−source voltage VGSS ±20 V DC (Note 1) ID −1 A Drain current Pulse (Note 1) IDP −3 A Drain power dissipation PD 0.5 W Drain power dissipation (Note 2) PD 1.5 W Single pulse avalanche energy (Note 3) EAS 136.5 mJ Avalanche current IAR −1 A Repetitive avalanche energy (Note 4) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2−5K1B Weight: 0.05 g (typ.) Z E Part No. (or abbreviation code) Lot No. Note 5 Note 5: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. |
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