2N5339 datasheet(1/2 Pages) MICROSEMI

Part #	2N5339

Description	NPN POWER SILICON SWITCHING TRANSISTOR

PDF	2 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/560

T4-LDS-0011 Rev. 2 (080693)

Page 1 of 2

DEVICES

LEVELS

2N5339

2N5339U3

JAN

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

100

Vdc

Collector-Base Voltage

VCBO

100

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Base Current

IB

1.0

Adc

Collector Current

IC

5.0

Adc

Total Power Dissipation

@ TA = +25°C

(1)

@ TC = +25°C

(2)

@ TC = +25°C

(3) – U3

PT

1.0

17.5

75

W

Operating & Storage Junction Temperature Range

Top , Tstg

-65 to +200

°C

Thermal Resistance, Junction-to Air

RθJA

175

°C/W

1)

Derate linearly 5.71mW/°C for TA > 25°C

2)

Derate linearly 100mW/°C for TC > 25°C

3)

Derate linearly 434mW/°C for TC > 25°C – U3

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 50mAdc

V(BR)CEO

100

Vdc

Collector-Emitter Cutoff Current

VCE = 100Vdc

ICEO

100

µAdc

Collector-Emitter Cutoff Current

VCE = 90Vdc, VBE = 1.5Vdc

ICEX

1.0

µAdc

Collector-Base Cutoff Current

VCB = 100Vdc

ICBO

1.0

µAdc

Emitter-Base Cutoff Current

VEB = 6.0Vdc

IEBO

100

µAdc

TO-39

(TO-205AD)

U-3

(TO-276AA)

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