2N5339 datasheet(2/2 Pages) MICROSEMI

2 / 2 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/560

T4-LDS-0011 Rev. 2 (080693)

Page 2 of 2

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

IC = 0.5Adc, VCE = 2.0Vdc

IC = 2.0Adc, VCE = 2.0Vdc

IC = 5.0Adc, VCE = 2.0Vdc

hFE

240

Collector-Emitter Saturation Voltage

IC = 2.0Adc, IB = 0.2Adc

IC = 5.0Adc, IB = 0.5Adc

VCE(sat)

0.7

1.2

Vdc

Base-Emitter Saturation Voltage

IC = 2.0Adc, IB = 0.2Adc

IC = 5.0Adc, IB = 0.5Adc

VBE(sat)

1.2

1.8

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 0.5Adc, VCE = 10Vdc, f = 10MHz

|hfe|

3.0

Output Capacitance

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Cobo

250

Input Capacitance

VBE = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

Cibo

1,000

SAFE OPERATING AREA

DC Tests

TC = +25°C, 1 Cycle, t ≥ 0.5s

Test 1

VCE = 2.0Vdc, IC = 5.0Adc

Test 2

VCE = 5.0Vdc, IC = 2.0Adc

Test 3

VCE = 90Vdc, IC = 55mAdc

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%

2N5339 Datasheet(PDF) 2 Page - Microsemi Corporation

2N5339 Datasheet(HTML) 2 Page - Microsemi Corporation

Html Pages

1 2

Datasheet Download

Link URL