2N6301 datasheet(1/3 Pages) MICROSEMI

Part #	2N6301

Description	NPN DARLINGTON POWER

PDF	3 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

NPN DARLINGTON POWER

SILICON TRANSISTOR

Qualified per MIL-PRF-19500/539

T4-LDS-0171 Rev. 1 (101129)

Page 1 of 3

DEVICES

LEVELS

2N6300

2N6301

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

2N6300

2N6301

Unit

Collector-Emitter Voltage

VCEO

60

80

Vdc

Collector-Base Voltage

VCBO

60

80

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Base Current

IB

120

mAdc

Collector Current

IC

8.0

Adc

Total Power Dissipation

@ TC = +0°C

(1)

@ TC = +100°C

PT

75

32

W

Operating & Storage Junction Temperature Range

Tj, Tstg

-55 to +200

°C

Note:

1.

Derate linearly 0.428W/°C above TC > 0°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Voltage

IC = 100mAdc

2N6300

2N6301

V(BR)CEO

60

80

Vdc

Collector-Emitter Cutoff Current

VCE = 30Vdc

VCB = 40Vdc

2N6300

2N6301

ICEO

0.5

mAdc

Collector-Emitter Cutoff Current

VCE = 60Vdc, VBE = -1.5Vdc

VCE = 80Vdc, VBE = -1.5Vdc

2N6300

2N6301

ICEX

0.5

mAdc

Emitter-Base Cutoff Current

VEB = 5.0Vdc

IEBO

2.0

mAdc

TO-66 (TO-213AA)

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