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STL15DN4F5 Datasheet(PDF) 4 Page - STMicroelectronics |
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STL15DN4F5 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Electrical characteristics STL15DN4F5 4/12 Doc ID 17739 Rev 1 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 40 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 24 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 7.5 A 89 m Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz VGS = 0 - 1550 230 25 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 20 V, ID = 15 A VGS = 10 V (see Figure 14) - 25 6 5.5 - nC nC nC |
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