1

Low Noise GaAs MMIC Power Amplifier

7.5 - 12.0 GHz

Rev. V6

MAAM71200

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• Noise Figure: 2.3 dB Typical

• Gain: 16.5 dB Typical

• Low Bias Current

• Single Bias Supply

• On-Chip Bias Network

• DC Decoupled RF Input and Output

Description

The MAAM71200 die is a wide-band, low noise,

MMIC amplifier.

It includes two integrated gain

stages and employs series inductive feedback to

obtain excellent noise figure and a good, 50 Ω, input

and output impedance match over the entire

frequency band. The MAAM71200 operates from a

single +4 V supply.

The MAAM71200 is manufactured in-house using a

reliable, 0.5-micron, GaAs MESFET process. This

product is 100% RF tested to ensure compliance to

performance specifications.

Die

Ordering Information

Part Number

Package

MAAM71200

Die

Parameter

Absolute Maximum

Voltage

+7 V

Input Power

+20 dBm

Operating Temperature

-55°C to +125°C

Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause

Schematic

RF IN

RF OUT

S1a

S1b

S1c S2a

S2b

S2c

S2d