2SA1015 datasheet(2/4 Pages) UTC

2 / 4 page

2SA1015

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2of 4

www.unisonic.com.tw

QW-R201-004.C

ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current

-150

Base Current

-50

Collector Dissipation

400

Junction Temperature

125

°C

Storage Temperature

TSTG

-55 ~ +125

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO IC=-100μA, IE=0

-50

Collector-Emitter Breakdown Voltage

BVCEO IC=-10mA, IB=0

-50

Emitter-Base Breakdown Voltage

BVEBO IE=-10μA, IC=0

-5

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-100

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-100

hFE1

VCE=-6V, IC=-2mA

120

700

DC Current Gain

hFE2

VCE=-6V, IC=-150mA

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-100mA, IB=-10mA

-0.1

-0.3

Base-Emitter Saturation Voltage

VBE(SAT) IC=-100mA, IB=-10mA

-1.1

Output Capacitance

COB

VCB=-10V, IE=0, f=1MHz

4.0

7.0

Current Gain Bandwidth Product

VCE=-10V, Ic=-1mA

MHz

Noise Figure

VCE=-6V , IC=-0.1mA,

RG=1kΩ, f=100Hz

0.5

CLASSIFICATION OF hFE1

RANK

RANGE

120-240

200-400

350-700

2SA1015 Datasheet(PDF) 2 Page - Unisonic Technologies

2SA1015 Datasheet(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

Datasheet Download

Link URL